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Please use this identifier to cite or link to this item: https://elib.bsu.by/handle/123456789/305238
Title: Radiation-Induced Alteration of the Reflection Spectra of Diazoquinone–Novolac Photoresist Films by Implantation of Ag+ Ions
Authors: Kharchenko, A. A.
Brinkevich, D. I.
Brinkevich, S. D.
Prosolovich, V. S.
Issue Date: 14-Jul-2023
Publisher: Pleiades Publishing, Ltd.
Citation: High Energy Chemistry. – 2023. – Vol. 57, No. 6. – P. 498–503.
Abstract: FP9120 diazoquinone–novolac positive photoresist films 1.5 μm thick implanted with Ag+ ions and supported on the surface of KDB-10 (111) silicon wafers by centrifugation have been studied by measuring reflection spectra. It has been shown that ion implantation leads to a decrease in the refractive index of the photoresist due to radiation crosslinking of novolac resin molecules and a decrease in the density ρ and the molecular refraction RM of the photoresist. It has been established that the reflection coefficient in the opaque region of the photoresistive film increases with the Ag+ implantation dose. The changes observed in the optical properties of the films under ion implantation conditions are explained taking into account radiation-chemical processes in the phenol–formaldehyde photoresist.
URI: https://elib.bsu.by/handle/123456789/305238
ISSN: 1608-3148 (Electronic)
0018-1439 (Print)
DOI: 10.1134/S0018143923060061
Licence: info:eu-repo/semantics/restrictedAccess
Appears in Collections:Кафедра физики полупроводников и наноэлектроники (статьи)

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