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Title: Influence of Defects Introduced by Irradiation with 4-9 MeV Helium Ions on Impedance of Silicon Diodes
Authors: Poklonski, N. A.
Gorbachuk, N. I.
Nha, V. Q.
Shpakovski, S. V.
Filipenya, V. A.
Skuratov, V. A.
Kotunowicz, T. N.
Kukharchyk, N.
Becker, H.-W.
Wieck, A.
Issue Date: 2015
Publisher: Polish Academy of Sciences
Citation: Acta Phys Pol A 2015;128(5):891-893.
Abstract: Silicon diodes irradiated with helium ions with energies of 4.1, 6.8 and 8.9 MeV are studied. It is shown that the mechanism determining the behaviour of frequency dependence of complex electric module and correspondingly the behavior of impedance of diodes irradiated with helium ions in the frequency region 3200 kHz is a recharging of vacancy complexes localized in the space charge region.
URI: https://elib.bsu.by/handle/123456789/264641
Scopus: 10.12693/APhysPolA.128.891
metadata.dc.identifier.scopus: 84952801915
Sponsorship: Belarusian Scientific program "Electronics and Photonics" (task 1.1.03) and the German Academic Exchange Service DAAD.
Appears in Collections:Кафедра физики полупроводников и наноэлектроники

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