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https://elib.bsu.by/handle/123456789/329537| Title: | Migration of impurity Ni atomic clusters in Si lattice |
| Authors: | Ismaylov, B. K. Zikrillayev, Z. N. Ismailov, K. A. Kenzhaev, Z. T. Saparov, S. A. |
| Keywords: | ЭБ БГУ::ЕСТЕСТВЕННЫЕ И ТОЧНЫЕ НАУКИ::Физика |
| Issue Date: | 2025 |
| Publisher: | Минск : БГУ |
| Citation: | Материалы и структуры современной электроники : материалы XI Междунар. науч. конф., Минск, 16–18 окт. 2024 г. / Белорус. гос. ун-т ; редкол.: В. Б. Оджаев (гл. ред.) [и др.]. – Минск : БГУ, 2025. – С. 6-9. |
| Abstract: | New physical phenomenon, the migration of clusters of impurity nickel atoms in silicon, has been discovered. It was shown that clusters move in the silicon lattice with a high diffusion coefficient (DNi ~ 10–9 cm2/s at T = 800 °C). The composition of the clusters is determined, its structure and diffusion mechanism are proposed. It was shown that it is possible to control the state of clusters in the crystal lattice, thus, to obtain semiconductor materials of a new type with unique functional capabilities, using the process of migration of clusters of impurity nickel atoms |
| Description: | Свойства, диагностика и применение полупроводниковых материалов и структур на их основе |
| URI: | https://elib.bsu.by/handle/123456789/329537 |
| ISBN: | 978-985-881-739-8 |
| Licence: | info:eu-repo/semantics/openAccess |
| Appears in Collections: | 2024. Материалы и структуры современной электроники |
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