Migration of impurity Ni atomic clusters in Si lattice

Abstract

New physical phenomenon, the migration of clusters of impurity nickel atoms in silicon, has been discovered. It was shown that clusters move in the silicon lattice with a high diffusion coefficient (DNi ~ 10–9 cm2/s at T = 800 °C). The composition of the clusters is determined, its structure and diffusion mechanism are proposed. It was shown that it is possible to control the state of clusters in the crystal lattice, thus, to obtain semiconductor materials of a new type with unique functional capabilities, using the process of migration of clusters of impurity nickel atoms