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Please use this identifier to cite or link to this item: https://elib.bsu.by/handle/123456789/306925
Title: Impedance of defective silicon layers formed in Al/SiO2/n-Si structures by irradiation with high-energy helium ions
Authors: Gorbachuk, N. I.
Poklonski, N. A.
Yermakova, K. A.
Shpakovski, S. V.
Keywords: ЭБ БГУ::ЕСТЕСТВЕННЫЕ И ТОЧНЫЕ НАУКИ::Физика
Issue Date: 2023
Publisher: Minsk : Publ. A. Varaksin
Citation: Proc. X Int. Sci. Conf. “Actual Problems of Solid State Physics”, Minsk, 22–26 May, 2023 / SSPA “Scientific-Practical Materials Research Centre of NAS of Belarus”; Ed. by V.M. Fedosyuk (chairman) [et al.]. – Minsk: Publ. A. Varaksin, 2023. – P. 618–621
Abstract: Al/SiO2/n-Si MOS structures irradiated with 5 MeV helium ion are studied. The irradiation fluence varied from 10^10 to 10^12 cm^−2. The capacitance–voltage (C-V) characteristics, frequency dependences of impedance Z and DLTS spectra were measured. It was found that irradiation leads to an increase in Z' of structures in the depletion mode in the frequency range f = 2–500 kHz. Compensation of doping impurity by radiation-induced defects is accompanied by a decrease in the capacitance of structures in the deep inversion mode. DLTS spectroscopy confirmed that the surface states density increase, caused by helium ion irradiation, affects impedance spectra of the structures.
URI: https://elib.bsu.by/handle/123456789/306925
ISBN: 978-985-7299-65-2
Sponsorship: The authors are grateful to V.M. Lomako, Ph.D. in Physics and Mathematics, for technical support and advice.
Licence: info:eu-repo/semantics/openAccess
Appears in Collections:Кафедра физики полупроводников и наноэлектроники (статьи)

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