Ion Implantation in Diazoquinone–Novolac Photoresist

Abstract

The processes of modifying the structural and optical properties of FP9120 and S1813 diazoquinone–novolac photoresist films on single-crystal silicon wafers beyond the range of ions by implantation of light B+, P+ and heavy Sb+ ions have been studied using the techniques of attenuated total reflection Fourier-transform IR spectroscopy, indentation, and measurement of reflection spectra. It has been shown that during the implantation of light B + and P + ions, the processes involving the photosensitive photoresist component, naphthoquinone diazide, are dominant, which lead to the formation of ketene and its subsequent reactions. In the case of implantation of heavy Sb+ ions, radiation-induced reactions behind the implantation layer proceed predominantly with the participation of macromolecules of the main photoresist component phenol–formaldehyde resin. The established differences are due to the prevalence of the electronic stopping mechanism for light ions and nuclear stopping for heavy ions.