Optical and Electrophysical Properties of Gate Dielectrics Obtained by Means of Rapid Thermal Processing

Abstract

Investigations of the optical and electrophysical parameters of the gate dielectrics were performed, obtained by means of rapid thermal processing (RTP) under the atmospheric pressure. It is established that for dielectrics obtained by means of the triple-stage process with the final treatment in the atmosphere of nitrogen, the absolute value of the flat-band voltage is 0.42 V smaller than for the dielectrics formed by the double-stage process. Also, one can observe the growth of the relative value of the surface potential by 100 units on average, which is the effect of the liquidation of the considerable number of defects responsible for the presence of the Coulomb centers in the layer of dielectric. Meanwhile, one can observe the step-up of the electric strength and the breakdown voltage by 3.3 MV/cm and 1 V appropriately, which signifies relaxation of the resilient strains of the deformed connections and compensation of the ruptured bonds both in the dielectric and on its boundary with Si in process of the RTP.