Raman Scattering In Diamond Irradiated With High-Energy Xenon Ions

Abstract

Accumulation of radiation damage and associated mechanical stresses in diamonds irradiated with 167 MeV Xe ions to fluences 1.0 × 10^10 ÷ 8.15 × 10^14 cm^−2 have been studied using confocal Raman spectroscopy. The spectra were measured in a backscattering geometry across the irradiated layer by scanning the edge of single crystalline synthetic samples with nitrogen concentration 3 ÷ 5 ppm. All spectra were recorded at room temperature. Parameters of the 1332 cm^−1 first-order Raman line – the FWHM and peak position, studied as function of Xe ion fluence, were used to characterize the structural disorder and mechanical stress level.