Electronic Conductivity in a Р+-Ion Implanted Positive Photoresist

Abstract

FP-9120 positive photoresist films 1.8 μm thick implanted with boron and phosphorus ions deposited onto the surface of KDB-10 single-crystal (111) silicon wafers by centrifugation are investigated by their conductivity and electron spin resonance measurements. It is shown that the Р+ ion implantation leads to the formation of a layer with an electronic conductivity of about 10^−9 Ω^−1 cm^−1. At a phosphorous implantation dose of 6 × 10^15 cm^−2, the electron spin resonance spectrum contains a narrow isotropic line with a g factor of 2.00654 and a width of 3.83 G, which is most likely related to the formation of phenoxy radicals. As the implantation dose increases to 1.2 × 10^16 cm^−2, a line with a g factor of 2.00264 and a width of 3.96 G is detected in the electron spin resonance spectrum, which is caused by unpaired electrons delocalized according to the π-polyconjugated system.