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Please use this identifier to cite or link to this item: https://elib.bsu.by/handle/123456789/253587
Title: Weak localization in polycrystalline tin dioxide films
Authors: Ksenevich, V.
Dorosinets, V.
Adamchuk, D.
Macutkevic, J.
Banys, J.
Keywords: ЭБ БГУ::ЕСТЕСТВЕННЫЕ И ТОЧНЫЕ НАУКИ::Физика
Issue Date: 2020
Publisher: MDPI
Citation: Materials. – 2020. – Vol. 13, № 23. – P. 5415 (14 pp.).
Abstract: The electrical and magnetotransport properties of nanocrystalline tin dioxide films were studied in the temperature range of 4–300 K and in magnetic fields up to 8 T. SnO2−δ films were fabricated by reactive direct current (DC) magnetron sputtering of a tin target with following 2 stage temperature annealing of synthesized samples. The nanocrystalline rutile structure of films was confirmed by X-ray diffraction analysis. The temperature dependences of the resistance R(T) and the negative magnetoresistance (MR) were explained within the frame of a model, taking into account quantum corrections to the classical Drude conductivity. Extracted from the R(T) and R(B) dependences electron dephasing length values indicate the 3D character of the weak localization (WL) in our samples.
URI: https://elib.bsu.by/handle/123456789/253587
ISSN: 1996-1944
DOI: 10.3390/ma13235415
Sponsorship: The work was supported by the State Committee on Science and Technology of the Republic of Belarus (grant No. F19LITG-001), Research Council of Lithuania (grant No. S-LB-19-5), Belarusian National Research Program “Convergence-2020” (subprogram “Integration”, grant No. 3.3.1), and by Program of EU H2020-MSCA-RISE-2015 (grant No. 871284 SSHARE).
Appears in Collections:Кафедра физики полупроводников и наноэлектроники (статьи)

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