Browsing by Author Zayats, G. M.
Showing results 1 to 6 of 6
Preview | Issue Date | Title | Author(s) |
| 2012 | Controlling Boron Diffusion during Rapid Thermal Annealing with CoImplantation by Amphoteric Impurity Atoms | Makarevich, Yu. V.; Komarov, F. F.; Komarov, A. F.; Mironov, A. M.; Zayats, G. M.; Miskevich, S. A. |
| 2013 | Modeling of Thermal Processing at the Formation of Shallow Doped IC Active Regions | Komarov, A. F.; Velichko, O. I.; Zayats, G. M.; Komarov, F. F.; Miskiewicz, S. A.; Mironov, A. M.; Makarevich, Yu. V. |
| 2009 | Numerical method for computer modeling of diffusion of implanted dopant atoms in silicon in modern VLSI technology | Khina, B. B.; Tsurko, V. A.; Zayats, G. M. |
| 2017 | Radiation degradation of bipolar transistor current gain | Miskiewicz, S. A.; Komarov, A. F.; Komarov, F. F.; Zayats, G. M.; Soroka, S. A. |
| 2015 | Simulation of Radiation Effects in SiO2/Si Structures | Komarov, F. F.; Zayats, G. M.; Komarov, A. F.; Miskiewicz, S. A.; Michailov, V. V.; Komsta, H. |
| 2014 | Simulation of Radiation Effects in SiO2/Si Structures | Komarov, A. F.; Zayats, G. M.; Komarov, F. F.; Miskiewicz, S. A.; Michailov, V. V. |