Logo BSU

Please use this identifier to cite or link to this item: https://elib.bsu.by/handle/123456789/170215
Title: Modeling of Thermal Processing at the Formation of Shallow Doped IC Active Regions
Authors: Komarov, A. F.
Velichko, O. I.
Zayats, G. M.
Komarov, F. F.
Miskiewicz, S. A.
Mironov, A. M.
Makarevich, Yu. V.
Issue Date: 2013
Publisher: Polska Akademia Nauk
Citation: Acta Physica Polonica A. - 2013. - Vol. 123, No. 5. - Pp. 804-808.
Abstract: Physical and mathematical models as well as numerical algorithms for simulation of advanced technological processes, such as thermal annealing after low-energy ion implantation used during the VLSI fabrication are presented. In this paper we propose a model that treats the migration of the impurity atoms at the thermal annealing. We take into account process nonlinearity and influence of non-uniform defects distribution as well as electric field and elastic stress on the migration of atoms. The redistribution of point defects as well as the diffusion of nonequilibrium impurity interstitials in silicon are described by time-dependent quasi-linear parabolic equations. The results of numerical calculations are presented as well
URI: http://elib.bsu.by/handle/123456789/170215
ISSN: 0587-4246; 1898-794X (online)
Appears in Collections:Статьи сотрудников НИИ ПФП

Files in This Item:
File Description SizeFormat 
804-808.pdf359,94 kBAdobe PDFView/Open
Show full item record Google Scholar


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.