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Please use this identifier to cite or link to this item: https://elib.bsu.by/handle/123456789/95276
Title: Numerical method for computer modeling of diffusion of implanted dopant atoms in silicon in modern VLSI technology
Authors: Khina, B. B.
Tsurko, V. A.
Zayats, G. M.
Keywords: ЭБ БГУ::ОБЩЕСТВЕННЫЕ НАУКИ::Информатика
Issue Date: 2009
Publisher: Минск, БГУ
Abstract: An extended Jive-stream model Jor diffusion in silicon is presented. A finite-difference method for computer modeling of dopant diffusion during post-implantation annealing is developed. Conservative implicit finite-difference schemes are obtained using integration-interpolation method. The nonlinear algebraic equation describing the local electroneutrality condition is solved using the bisection method. The obtained nonlinear system of difference equations is solved by iterative method.
URI: http://elib.bsu.by/handle/123456789/95276
Appears in Collections:ИНФОРМАЦИОННЫЕ СИСТЕМЫ И ИХ ПРИЛОЖЕНИЯ В ПРОИЗВОДСТВЕ И УПРАВЛЕНИИ

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