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Please use this identifier to cite or link to this item: https://elib.bsu.by/handle/123456789/95276
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dc.contributor.authorKhina, B. B.-
dc.contributor.authorTsurko, V. A.-
dc.contributor.authorZayats, G. M.-
dc.date.accessioned2014-05-06T07:45:38Z-
dc.date.available2014-05-06T07:45:38Z-
dc.date.issued2009-
dc.identifier.urihttp://elib.bsu.by/handle/123456789/95276-
dc.description.abstractAn extended Jive-stream model Jor diffusion in silicon is presented. A finite-difference method for computer modeling of dopant diffusion during post-implantation annealing is developed. Conservative implicit finite-difference schemes are obtained using integration-interpolation method. The nonlinear algebraic equation describing the local electroneutrality condition is solved using the bisection method. The obtained nonlinear system of difference equations is solved by iterative method.ru
dc.language.isoenru
dc.publisherМинск, БГУru
dc.subjectЭБ БГУ::ОБЩЕСТВЕННЫЕ НАУКИ::Информатикаru
dc.titleNumerical method for computer modeling of diffusion of implanted dopant atoms in silicon in modern VLSI technologyru
dc.typeArticleru
Appears in Collections:ИНФОРМАЦИОННЫЕ СИСТЕМЫ И ИХ ПРИЛОЖЕНИЯ В ПРОИЗВОДСТВЕ И УПРАВЛЕНИИ

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