Numerical method for computer modeling of diffusion of implanted dopant atoms in silicon in modern VLSI technology

Abstract

An extended Jive-stream model Jor diffusion in silicon is presented. A finite-difference method for computer modeling of dopant diffusion during post-implantation annealing is developed. Conservative implicit finite-difference schemes are obtained using integration-interpolation method. The nonlinear algebraic equation describing the local electroneutrality condition is solved using the bisection method. The obtained nonlinear system of difference equations is solved by iterative method.