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Browsing by Author Velichko, O. I.

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Preview	Issue Date	Title	Author(s)
	2019	A Model of High-Concentration Phosphorus Diﬀusion in Silicon with Account for Crystal Lattice Deformation and Formation of Negatively Charged Clusters	Velichko, O. I.
	2011	Analytical Solution of the Equations Describing Interstitial Migration of Impurity Atoms.	Velichko, O. I.; Sobolevskaya, N. A.
	2011	Change in the Microscopic Diffusion Mechanisms of Boron Implanted into Silicon with Increase in the Annealing Temperature	Velichko, O. I.; Hundorina, A. A.
	2003	Diffusion of ion-implanted As in Si: influence of the elastic stress	Velichko, O. I.; Dobrushkin, V. A.; Tsurko, V. A.
	2013	Modeling high-concentration phosphorus diffusion in crystalline silicon	Velichko, O. I.; Aksenov, V. V.; Anufriev, L. P.; Golubev, N. F.; Komarov, A. F.
	2011	MODELING OF ION-IMPLANTED ATOMS DIFFUSION DURING THE EPITAXIAL GROWTH OF THE LAYER	Velichko, O. I.; Burko, V. A.
	2013	Modeling of Thermal Processing at the Formation of Shallow Doped IC Active Regions	Komarov, A. F.; Velichko, O. I.; Zayats, G. M.; Komarov, F. F.; Miskiewicz, S. A.; Mironov, A. M.; Makarevich, Yu. V.
	2018	Radiation-Enhanced Diffusion of Phosphorus in Silicon	Velichko, O. I.
	2001	Simulation of plasma assisted doping of silicon	Velichko, O. I.; Dobrushkin, V. A.; Tsurko, V. A.; Senko, N. A.

Showing results 1 to 9 of 9