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Please use this identifier to cite or link to this item: https://elib.bsu.by/handle/123456789/208220
Title: Diffusion of ion-implanted As in Si: influence of the elastic stress
Authors: Velichko, O. I.
Dobrushkin, V. A.
Tsurko, V. A.
Keywords: ЭБ БГУ::ЕСТЕСТВЕННЫЕ И ТОЧНЫЕ НАУКИ::Физика
Issue Date: 2003
Publisher: Минск : БГУ
Citation: Взаимодействие излучений с твердым телом: материалы V междунар. науч. конф., 6-9 окт. 2003 г., Минск. — Мн.: БГУ, 2003. — С. 226-228.
Abstract: The model of transient enhanced diffusion of arsenic in silicon taking into account the effect of the elastic stress on the drift of "dopant atom — point defect" pairs has been developed and high concentration diffusion of ion-implanted As near the surface of a semiconductor has been simulated.
URI: http://elib.bsu.by/handle/123456789/208220
ISBN: 985-445-236-0; 985-445-235-2
Appears in Collections:2003. Взаимодействие излучений с твердым телом

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