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https://elib.bsu.by/handle/123456789/208220| Title: | Diffusion of ion-implanted As in Si: influence of the elastic stress |
| Authors: | Velichko, O. I. Dobrushkin, V. A. Tsurko, V. A. |
| Keywords: | ЭБ БГУ::ЕСТЕСТВЕННЫЕ И ТОЧНЫЕ НАУКИ::Физика |
| Issue Date: | 2003 |
| Publisher: | Минск : БГУ |
| Citation: | Взаимодействие излучений с твердым телом: материалы V междунар. науч. конф., 6-9 окт. 2003 г., Минск. — Мн.: БГУ, 2003. — С. 226-228. |
| Abstract: | The model of transient enhanced diffusion of arsenic in silicon taking into account the effect of the elastic stress on the drift of "dopant atom — point defect" pairs has been developed and high concentration diffusion of ion-implanted As near the surface of a semiconductor has been simulated. |
| URI: | http://elib.bsu.by/handle/123456789/208220 |
| ISBN: | 985-445-236-0; 985-445-235-2 |
| Appears in Collections: | 2003. Взаимодействие излучений с твердым телом |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| 226-228.pdf | 2,97 MB | Adobe PDF | View/Open |
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