Please use this identifier to cite or link to this item:
https://elib.bsu.by/handle/123456789/208220Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Velichko, O. I. | - |
| dc.contributor.author | Dobrushkin, V. A. | - |
| dc.contributor.author | Tsurko, V. A. | - |
| dc.date.accessioned | 2018-11-06T05:57:10Z | - |
| dc.date.available | 2018-11-06T05:57:10Z | - |
| dc.date.issued | 2003 | - |
| dc.identifier.citation | Взаимодействие излучений с твердым телом: материалы V междунар. науч. конф., 6-9 окт. 2003 г., Минск. — Мн.: БГУ, 2003. — С. 226-228. | ru |
| dc.identifier.isbn | 985-445-236-0; 985-445-235-2 | - |
| dc.identifier.uri | http://elib.bsu.by/handle/123456789/208220 | - |
| dc.description.abstract | The model of transient enhanced diffusion of arsenic in silicon taking into account the effect of the elastic stress on the drift of "dopant atom — point defect" pairs has been developed and high concentration diffusion of ion-implanted As near the surface of a semiconductor has been simulated. | ru |
| dc.language.iso | en | ru |
| dc.publisher | Минск : БГУ | ru |
| dc.subject | ЭБ БГУ::ЕСТЕСТВЕННЫЕ И ТОЧНЫЕ НАУКИ::Физика | ru |
| dc.title | Diffusion of ion-implanted As in Si: influence of the elastic stress | ru |
| dc.type | conference paper | ru |
| Appears in Collections: | 2003. Взаимодействие излучений с твердым телом | |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| 226-228.pdf | 2,97 MB | Adobe PDF | View/Open |
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