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dc.contributor.authorVelichko, O. I.-
dc.contributor.authorDobrushkin, V. A.-
dc.contributor.authorTsurko, V. A.-
dc.date.accessioned2018-11-06T05:57:10Z-
dc.date.available2018-11-06T05:57:10Z-
dc.date.issued2003-
dc.identifier.citationВзаимодействие излучений с твердым телом: материалы V междунар. науч. конф., 6-9 окт. 2003 г., Минск. — Мн.: БГУ, 2003. — С. 226-228.ru
dc.identifier.isbn985-445-236-0; 985-445-235-2-
dc.identifier.urihttp://elib.bsu.by/handle/123456789/208220-
dc.description.abstractThe model of transient enhanced diffusion of arsenic in silicon taking into account the effect of the elastic stress on the drift of "dopant atom — point defect" pairs has been developed and high concentration diffusion of ion-implanted As near the surface of a semiconductor has been simulated.ru
dc.language.isoenru
dc.publisherМинск : БГУru
dc.subjectЭБ БГУ::ЕСТЕСТВЕННЫЕ И ТОЧНЫЕ НАУКИ::Физикаru
dc.titleDiffusion of ion-implanted As in Si: influence of the elastic stressru
dc.typeconference paperru
Appears in Collections:2003. Взаимодействие излучений с твердым телом

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