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Please use this identifier to cite or link to this item: https://elib.bsu.by/handle/123456789/170227
Title: Modeling high-concentration phosphorus diffusion in crystalline silicon
Authors: Velichko, O. I.
Aksenov, V. V.
Anufriev, L. P.
Golubev, N. F.
Komarov, A. F.
Issue Date: 2013
Publisher: Springer New York Consultants Bureau
Citation: Journal of Engineering Physics and Thermophysics. - Vol. 86, No. 3. - Pp. 667-675.
Abstract: Phosphorus diffusion in crystalline silicon in doping from a surface source at a temperature of 840oC and a duration of 10 min has been modeled. Good agreement with experimental data has been obtained, which confi rms the adequacy of the employed model of high-concentration phosphorus diffusion. This model takes account of the drift of self-interstitials in the fi eld of internal elastic stresses
URI: http://elib.bsu.by/handle/123456789/170227
ISSN: 1062-0125
Appears in Collections:Статьи сотрудников НИИ ПФП

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