Please use this identifier to cite or link to this item:
https://elib.bsu.by/handle/123456789/170227| Title: | Modeling high-concentration phosphorus diffusion in crystalline silicon |
| Authors: | Velichko, O. I. Aksenov, V. V. Anufriev, L. P. Golubev, N. F. Komarov, A. F. |
| Keywords: | ЭБ БГУ::ЕСТЕСТВЕННЫЕ И ТОЧНЫЕ НАУКИ::Физика |
| Issue Date: | 2013 |
| Publisher: | Springer New York Consultants Bureau |
| Citation: | Journal of Engineering Physics and Thermophysics. - Vol. 86, No. 3. - Pp. 667-675. |
| Abstract: | Phosphorus diffusion in crystalline silicon in doping from a surface source at a temperature of 840oC and a duration of 10 min has been modeled. Good agreement with experimental data has been obtained, which confi rms the adequacy of the employed model of high-concentration phosphorus diffusion. This model takes account of the drift of self-interstitials in the fi eld of internal elastic stresses |
| URI: | http://elib.bsu.by/handle/123456789/170227 |
| ISSN: | 1062-0125 |
| Appears in Collections: | Статьи сотрудников НИИ ПФП |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| 667-675.pdf | 516,37 kB | Adobe PDF | View/Open |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.