Please use this identifier to cite or link to this item:
https://elib.bsu.by/handle/123456789/170227
Title: | Modeling high-concentration phosphorus diffusion in crystalline silicon |
Authors: | Velichko, O. I. Aksenov, V. V. Anufriev, L. P. Golubev, N. F. Komarov, A. F. |
Keywords: | ЭБ БГУ::ЕСТЕСТВЕННЫЕ И ТОЧНЫЕ НАУКИ::Физика |
Issue Date: | 2013 |
Publisher: | Springer New York Consultants Bureau |
Citation: | Journal of Engineering Physics and Thermophysics. - Vol. 86, No. 3. - Pp. 667-675. |
Abstract: | Phosphorus diffusion in crystalline silicon in doping from a surface source at a temperature of 840oC and a duration of 10 min has been modeled. Good agreement with experimental data has been obtained, which confi rms the adequacy of the employed model of high-concentration phosphorus diffusion. This model takes account of the drift of self-interstitials in the fi eld of internal elastic stresses |
URI: | http://elib.bsu.by/handle/123456789/170227 |
ISSN: | 1062-0125 |
Appears in Collections: | Статьи сотрудников НИИ ПФП |
Files in This Item:
File | Description | Size | Format | |
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667-675.pdf | 516,37 kB | Adobe PDF | View/Open |
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