Please use this identifier to cite or link to this item:
https://elib.bsu.by/handle/123456789/170227Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Velichko, O. I. | - |
| dc.contributor.author | Aksenov, V. V. | - |
| dc.contributor.author | Anufriev, L. P. | - |
| dc.contributor.author | Golubev, N. F. | - |
| dc.contributor.author | Komarov, A. F. | - |
| dc.date.accessioned | 2017-04-05T08:39:02Z | - |
| dc.date.available | 2017-04-05T08:39:02Z | - |
| dc.date.issued | 2013 | - |
| dc.identifier.citation | Journal of Engineering Physics and Thermophysics. - Vol. 86, No. 3. - Pp. 667-675. | ru |
| dc.identifier.issn | 1062-0125 | - |
| dc.identifier.uri | http://elib.bsu.by/handle/123456789/170227 | - |
| dc.description.abstract | Phosphorus diffusion in crystalline silicon in doping from a surface source at a temperature of 840oC and a duration of 10 min has been modeled. Good agreement with experimental data has been obtained, which confi rms the adequacy of the employed model of high-concentration phosphorus diffusion. This model takes account of the drift of self-interstitials in the fi eld of internal elastic stresses | ru |
| dc.language.iso | en | ru |
| dc.publisher | Springer New York Consultants Bureau | ru |
| dc.subject | ЭБ БГУ::ЕСТЕСТВЕННЫЕ И ТОЧНЫЕ НАУКИ::Физика | ru |
| dc.title | Modeling high-concentration phosphorus diffusion in crystalline silicon | ru |
| dc.type | journal article | ru |
| Appears in Collections: | Статьи сотрудников НИИ ПФП | |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| 667-675.pdf | 516,37 kB | Adobe PDF | View/Open |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.