Please use this identifier to cite or link to this item:
https://elib.bsu.by/handle/123456789/203881| Title: | Simulation of plasma assisted doping of silicon |
| Authors: | Velichko, O. I. Dobrushkin, V. A. Tsurko, V. A. Senko, N. A. |
| Keywords: | ЭБ БГУ::ЕСТЕСТВЕННЫЕ И ТОЧНЫЕ НАУКИ::Физика |
| Issue Date: | 2001 |
| Publisher: | Минск : БГУ |
| Citation: | Взаимодействие излучений с твердым телом: материалы IV Междунар. науч. конф., 3-5 окт. 2001 г., Минск. — Мн.: БГУ, 2001. — С. 70-72 |
| Abstract: | The model of plasma assisted doping of silicon has been developed and calculations of the plasma immersion boron ion implantation combined with the following rapid thermal annealing or with the thermal annealing and additional radiation enhanced diffusion under hydrogen plasma processing have been made. |
| URI: | http://elib.bsu.by/handle/123456789/203881 |
| ISBN: | 985-445-236-0 |
| Appears in Collections: | 2001. Взаимодействие излучений с твердым телом |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.