Magnetic Ordering in Crystalline Si Implanted with Co Ions with Intermediate Doses

Abstract

Crystalline Si implanted with the 380-keV cobalt ions with the dose Φ = 10¹⁴-10¹⁶ cm^-2 is studied. The method of Rutherford backscattering is used to determine the Si amorphization threshold (Φ = 3 × 10¹⁴ cm^-2). A quasi-resonance anisotropic line with a width of approximately 170 mT is observed at a temperature of T = 78 K in the spectrum of the electron spin resonance of silicon implanted with Co⁺ ions with Φ 3 × 10 ¹⁴) cm^-2. A resonance signal of paramagnetic centers in amorphous Si regions (g = 2.0057 and δB = 0.74 mT) is observed against the background of the above line. A quasi-resonance line of the electron spin resonance related to Co atoms and intrinsic Si defects was not observed at T = 300 K.