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https://elib.bsu.by/handle/123456789/342090| Title: | Plasmonic-Enhanced Light Absorption in Periodic Silicon Structures: The Effect of Inter-Island Distance |
| Authors: | Mukhammad, A.I. Chizh, K.V. Plotnichenko, V.G. Yuryev, V.A. Gaiduk, P.I. |
| Open Researcher and Contributor ID: | 0000-0002-1304-1309 |
| Keywords: | ЭБ БГУ::ТЕХНИЧЕСКИЕ И ПРИКЛАДНЫЕ НАУКИ. ОТРАСЛИ ЭКОНОМИКИ::Электроника. Радиотехника |
| Issue Date: | 2020 |
| Publisher: | Springer Nature |
| Citation: | Semiconductors.2020; Vol. 54(14): P. 1889-1892 |
| Abstract: | Absorption spectra of Si/SiO<sub>2</sub>/Si structure with highly doped silicon layers are simulated with Finite Difference Time Domain (FDTD) as a function of periodicity of surface islands. The effect of multiple resonance is studied for different inter-island distances. A wide band (>12 µm) of high light absorption (>70%) is registered for a structure with a period of 8 μm and an inter-island distance of 3 μm. It is revealed for the spectral range of 10–20 μm that the reduction of the inter-islands distance shifts the absorption peak position to the region of longer waves and results in the growth of the absorption level. |
| URI: | https://elib.bsu.by/handle/123456789/342090 |
| DOI: | 10.1134/S1063782620140201. |
| Sponsorship: | The research was supported by the Belarusian Republican Foundation for Fundamental Research (project no. Т18Р-190, no. G/R 20181511), and the State Scientific Research Program “Photonics, Opto- and Microelectronics” (G/R 20190644). |
| Licence: | info:eu-repo/semantics/openAccess |
| Appears in Collections: | Кафедра квантовой радиофизики и оптоэлектроники. Статьи |
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|---|---|---|---|---|
| S1063782620140201.pdf | 445,6 kB | Adobe PDF | View/Open |
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