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Please use this identifier to cite or link to this item: https://elib.bsu.by/handle/123456789/340289
Title: Microstructure of binary “metal-silicon” systems treated by low-energy high-current electron beams
Authors: Koval, N.N.
Uglov, V.V.
Ivanov, Yu.F.
Petukhou, Yu.A.
Kudaktsin, R.S.
Teresov, A.D.
Kalin, A.V.
Open Researcher and Contributor ID: 0000-0003-1929-4996
Keywords: ЭБ БГУ::ТЕХНИЧЕСКИЕ И ПРИКЛАДНЫЕ НАУКИ. ОТРАСЛИ ЭКОНОМИКИ::Электроника. Радиотехника
Issue Date: 2012
Publisher: Kovcheg
Citation: Plasma physics and plasma technology, Minsk, Belarus, 17–21 сентября 2012 года. Vol. Volume I. – Minsk, Belarus: Kovcheg, 2012. – P. 380-383
Abstract: In this communication we discuss peculiarities of microstructural changes in “metal layer (Ti, Zr, Cr)-silicon substrate” systems treated by LEHCEB with energy density 8-15 J/cm2 and pulse duration 50-200 μs. As it was shown in recent papers /2/, energy density of LEHCEB is sufficient for melting of the surface layer; therefore, mechanisms of structural transformation are mainly caused by solidification of the surface melt.
URI: https://elib.bsu.by/handle/123456789/340289
Licence: info:eu-repo/semantics/openAccess
Appears in Collections:Кафедра физики твердого тела и нанотехнологий (статьи)

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