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dc.contributor.authorSiahlo, A. I.-
dc.contributor.authorVyrko, S. A.-
dc.contributor.authorPopov, A. M.-
dc.contributor.authorPoklonski, N. A.-
dc.contributor.authorLozovik, Yu. E.-
dc.date.accessioned2025-12-13T18:07:37Z-
dc.date.available2025-12-13T18:07:37Z-
dc.date.issued2025-
dc.identifier.issn1567-1739-
dc.identifier.urihttps://elib.bsu.by/handle/123456789/338754-
dc.description.abstractThe scheme and operational principles of the nanoelectromechanical memory cells are proposed. These cells, which use two electrodes and a third gate electrode, operate by electrostatic unrolling of a carbon nanoscroll due to an applied voltage. Memory cell operation relies on two stable states: nonconducting Off state (rolled nanoscroll) and conducting On state (partially or fully unrolled nanoscroll). Based on the analysis of the memory cell energetics, the switching voltage between Off and On states is calculated as a function of the cell dimensions. The lower limit of the switching voltage is estimated to be about 5 V for two electrode cells and 15 V for cells with a third gate electrode. For cell dimensions that result in full nanoscroll unrolling in the On state, a return to the Off state is impossible. These cells are promising for archival memory applications, and the optimal cell dimensions for such applications are determined.ru
dc.description.sponsorshipA.M.P. and Y.E.L. acknowledge the support by the Russian Science Foundation grant No. 23-42-10010, https://rscf.ru/en/project/23-42-10010/. S.A.V. and N.A.P. acknowledge support by the Belarusian Republican Foundation for Fundamental Research (Grant No. F23RNF-049) and by the Belarusian National Research Program “Convergence-2025” (Task No. 3.02.1.1).ru
dc.language.isoenru
dc.publisherElsevier B.V.ru
dc.rightsinfo:eu-repo/semantics/openAccessru
dc.subjectЭБ БГУ::ЕСТЕСТВЕННЫЕ И ТОЧНЫЕ НАУКИ::Физикаru
dc.titleCarbon nanoscroll-based memory cellru
dc.typearticleru
dc.rights.licenseCC BY 4.0ru
dc.identifier.DOI10.1016/j.cap.2024.12.009-
Располагается в коллекциях:Кафедра физики полупроводников и наноэлектроники (статьи)

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