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https://elib.bsu.by/handle/123456789/329596| Title: | Temperature dependent parameters of single walled carbon nanotubes/Si heterojunctions |
| Authors: | Dronina, L. A. Kovalchuk, N. G. Lutsenko, E. V. Danilchyk, A. V. Prischepa, S. L. |
| Keywords: | ЭБ БГУ::ЕСТЕСТВЕННЫЕ И ТОЧНЫЕ НАУКИ::Физика |
| Issue Date: | 2025 |
| Publisher: | Минск : БГУ |
| Citation: | Материалы и структуры современной электроники : материалы XI Междунар. науч. конф., Минск, 16–18 окт. 2024 г. / Белорус. гос. ун-т ; редкол.: В. Б. Оджаев (гл. ред.) [и др.]. – Минск : БГУ, 2025. – С. 349-354. |
| Abstract: | In this study, the forward bias I-V characteristics of SWCNT/n-Si heterojunctions were studied in the wide temperature range of 20–315 K in order to get detailed information on the barrier heights distribution (ϕB). Schottky barrier height (SBH) and η, values and their dependencies on temperature were obtained by using Cheung-Cheung method, considering the presence of the interface native oxide layer. In order to explain the origin of anomalous temperature behavior of SBH and η, the temperature dependent barrier inhomogeneities were evaluated assuming the Gaussian distributions of the SBH |
| Description: | Нанотехнологии, наноструктуры, квантовые явления. Наноэлектроника. Приборы на квантовых эффектах |
| URI: | https://elib.bsu.by/handle/123456789/329596 |
| ISBN: | 978-985-881-739-8 |
| Licence: | info:eu-repo/semantics/openAccess |
| Appears in Collections: | 2024. Материалы и структуры современной электроники |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| 349-354.pdf | 602,54 kB | Adobe PDF | View/Open |
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