Please use this identifier to cite or link to this item:
https://elib.bsu.by/handle/123456789/27440| Title: | Electrical Properties of the Layered Single Crystals TlGaSe2 and TlInS2 |
| Authors: | Fedotov, A. K. Tarasik, M. I. Svito, I. A. Zhukowski, P. Koltunowicz, T. N. Mammadov, T. G. Seyidov, M. Yu. Suleymanov, R. A. Grivickas, V. Bicbaevas, V. |
| Keywords: | ЭБ БГУ::ЕСТЕСТВЕННЫЕ И ТОЧНЫЕ НАУКИ::Физика |
| Issue Date: | Jul-2012 |
| Publisher: | Electrical Review, R.88, N.7a (2012) 301–304 |
| Abstract: | In the doped crystals TlGaSe2 and TlInS2, using method of temperature dependencies of DC resistance in the temperature range of 100 – 300 K, the phase transitions at the temperatures of 240 – 245 K and 105 – 120 K were observed. The AC conductance measurements at room temperature indicated the hopping mechanism of carrier transport in the studied samples. |
| URI: | http://elib.bsu.by/handle/123456789/27440 |
| ISSN: | 0033-2097 |
| Appears in Collections: | Архив статей |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| Electrical Properties of the Layered Single Crystals TlGaSe2 and TlInS2.pdf | 756,83 kB | Adobe PDF | View/Open |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.