Adhesion of Irradiated Diazoquinone–Novolac Photoresist Films to Single-Crystal Silicon

Abstract

In this work, the effect of γ-irradiation on the adhesion properties of FP9120 diazoquinone-novolac photoresist films deposited on single-crystal silicon wafers by centrifugation was studied using an indentation method. It was found that γ-irradiation led to a decrease in the specific peeling energy G of photoresist films on silicon. In this case, the IR spectra of the photoresist exhibited a decrease in the intensity of vibration bands due to the Si–O–C moiety, which is responsible for adhesion to silicon, in the course of γ-irradiation. The observed experimental results were explained taking into account the radiation-chemical and relaxation processes occurring both at the photoresist/silicon interface and in the bulk of the polymer film.