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https://elib.bsu.by/handle/123456789/271134| Title: | Carrier Transport Mechanisms in Ion-Implanted Silicon-on-Insulator Structures with InSb Clusters |
| Authors: | Fedotov, Alexander K. Tyschenko, Ida Fedotova, Julia Pashkewich, Alexey Svito, Ivan |
| Keywords: | ЭБ БГУ::ЕСТЕСТВЕННЫЕ И ТОЧНЫЕ НАУКИ::Физика |
| Issue Date: | 2021 |
| Publisher: | Минск : БГУ |
| Citation: | Взаимодействие излучений с твердым телом : материалы 14-й Междунар. конф., посвящ. 100-летию Белорус. гос. ун-та, Минск, Беларусь, 21-24 сент. 2021 г. / Белорус. гос. ун-т ; редкол.: В. В. Углов (гл. ред.) [и др.]. – Минск : БГУ, 2021. – С. 388-391. |
| Abstract: | In this paper, we examine carrier transport mechanisms in Silicon-on-Insulator (SOI) structures, containing InSb nanoparticles in SiO2 layer, before and after annealing at 1273 K. The comparison of temperature dependences of current-voltage (I-V) characteristics allowed us to determine the mechanisms of carrier transport (hopping and zone-like) in this nanostructures and estimate some transport parameters in the temperature range of 2-300 K. The measurements have confirmed the presence of Fouler-Nordheim and hopping mechanism contributions into low-temperature I-V characteristics of the studied SOI structures |
| Description: | Секция 4. Формирование наноматериалов и наноструктур = Section 4. Formation of nanomaterials and nanostructures |
| URI: | https://elib.bsu.by/handle/123456789/271134 |
| ISSN: | 2663-9939 (Print) 2706-9060 (Online) |
| Appears in Collections: | 2021. Взаимодействие излучений с твердым телом |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| 388-391.pdf | 419,05 kB | Adobe PDF | View/Open |
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