Please use this identifier to cite or link to this item:
https://elib.bsu.by/handle/123456789/259544
Title: | Use of density functional theory for modeling optical properties of vacancy defects in nanoclusters of various SiC polytypes |
Authors: | Zhikol, O. A. Luzanov, A. V. Omelchenko, I. V. Pushkarchuk, A. L. Pushkarchuk, V. A. Nizovstev, A. P. Kilin, S. Y. Bezyazychnaya, T. V. Kuten, S. A. |
Keywords: | ЭБ БГУ::ЕСТЕСТВЕННЫЕ И ТОЧНЫЕ НАУКИ::Физика |
Issue Date: | 2018 |
Publisher: | Scientific and Technological Corporation |
Citation: | Funct Mater 2018;25(2):337-341. |
Abstract: | We studied electronic properties of the ground and lowest excited states of SiC defective nanoclusters falling into 3C, 2H and 4H polymorphic types. The standard time-dependent DFT method was used along with the economical model-core-potential approximation. Basing on our earlier works, we performed the corresponding excited state structural analysis and show for the lowest triplet-triplet ransition a significant effect of excitation localization in the defect vicinity. © 2018 - STC "Institute for Single Crystals". |
URI: | https://elib.bsu.by/handle/123456789/259544 |
DOI: | 10.15407/fm25.02.337 |
Scopus: | 85049122551 |
Appears in Collections: | Статьи НИУ «Институт ядерных проблем» |
Files in This Item:
File | Description | Size | Format | |
---|---|---|---|---|
18-Zhikol.pdf | 606,21 kB | Adobe PDF | View/Open |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.