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Please use this identifier to cite or link to this item: https://elib.bsu.by/handle/123456789/259544
Title: Use of density functional theory for modeling optical properties of vacancy defects in nanoclusters of various SiC polytypes
Authors: Zhikol, O. A.
Luzanov, A. V.
Omelchenko, I. V.
Pushkarchuk, A. L.
Pushkarchuk, V. A.
Nizovstev, A. P.
Kilin, S. Y.
Bezyazychnaya, T. V.
Kuten, S. A.
Keywords: ЭБ БГУ::ЕСТЕСТВЕННЫЕ И ТОЧНЫЕ НАУКИ::Физика
Issue Date: 2018
Publisher: Scientific and Technological Corporation
Citation: Funct Mater 2018;25(2):337-341.
Abstract: We studied electronic properties of the ground and lowest excited states of SiC defective nanoclusters falling into 3C, 2H and 4H polymorphic types. The standard time-dependent DFT method was used along with the economical model-core-potential approximation. Basing on our earlier works, we performed the corresponding excited state structural analysis and show for the lowest triplet-triplet ransition a significant effect of excitation localization in the defect vicinity. © 2018 - STC "Institute for Single Crystals".
URI: https://elib.bsu.by/handle/123456789/259544
DOI: 10.15407/fm25.02.337
Scopus: 85049122551
Appears in Collections:Статьи НИУ «Институт ядерных проблем»

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