Linear magnetoresistance in graphene formed on silicon carbide: two dimensional magnetotransport

Abstract

In this study we have tested the magnetoresistance (MR) and Hall-effect in grapheme formed on semi-insulating 4H-SiC substrate by thermal decomposition of its silicon face (0001) in Ar ambient at a high temperature of 1800–2000 °C over the large areas of SiC without any passivation for checking a possibility for sensor applications. Testing was done in a relatively low magnetic fields (up to 3 T) in the temperature range from 300 to 4.2 K. A large (up to 10%) and linear magnetoresistance was observed at 300 K, which is distinctively different from the other carbon nanomaterials. Furthermore, negative magnetoresistance behavior at a low field regime for low temperatures is recognized as a weak localization in graphene. This study suggests the potential of utilizing graphene formed on semi-insulating 4H-SiC for room temperature magneto-electronic device applications and for the sensors of first order phase transitions ice–water