Logo BSU

Please use this identifier to cite or link to this item: https://elib.bsu.by/handle/123456789/257286
Title: Near-edge optical anisotropy in SnSe single crystals
Authors: Zalamai, V. V.
Tiron, A. V.
Rusu, E. V.
Monaico, E. V.
Syrbu, N. N.
Keywords: ЭБ БГУ::ЕСТЕСТВЕННЫЕ И ТОЧНЫЕ НАУКИ::Физика
Issue Date: 2020
Publisher: Минск : БГУ
Citation: Материалы и структуры современной электроники : материалы IX Междунар. науч. конф., Минск, 14–16 окт. 2020 г. / Белорус. гос. ун-т ; редкол.: В. Б. Оджаев (гл. ред.) [и др.]. – Минск : БГУ, 2020. – С. 12-16.
Abstract: Edge absorption anisotropy in wide temperature interval (10–300 K) were investigated for SnSe single crystals. It was established that minimal band gap (1.091 eV at 300 K) is formed by direct transitions. These transitions are allowed in E||c and forbidden in E||a polarizations, respectively. The next direct band gap (1.316 eV at 300 K) is due to direct transitions allowed in E||a and forbidden in E||c polarization. The strong anisotropy of edge absorption is observed at rotation of polarization vector in a-c plane. The shift coefficient of edge absorption with temperature is estimated as 3.4×10-3 eVK -1 . The investigated samples possess a very high absorption coefficient in the intrinsic region
Description: Свойства, диагностика и применение полупроводниковых материалов и структур на их основе
URI: https://elib.bsu.by/handle/123456789/257286
ISBN: 978-985-881-073-3
Sponsorship: The authors acknowledge financial support from the Ministry of Education, Culture and Research of Moldova under the Grants #20.80009.5007.20 and 19.80013.50.07.02A/BL. Victor Zalamai and Eduard Monaico thanks to the Alexander von Humboldt Foundation for support
Appears in Collections:2020. Материалы и структуры современной электроники

Files in This Item:
File Description SizeFormat 
12-16.pdf832,11 kBAdobe PDFView/Open
Show full item record Google Scholar



Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.