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dc.contributor.authorNizovtsev, A. P.-
dc.contributor.authorKilin, S. Ya.-
dc.contributor.authorPushkarchuk, A. L.-
dc.contributor.authorKuten, S. A.-
dc.contributor.authorPoklonski, N. A.-
dc.contributor.authorMichels, D.-
dc.contributor.authorLyakhov, D.-
dc.contributor.authorJelezko, F.-
dc.date.accessioned2020-12-24T13:02:40Z-
dc.date.available2020-12-24T13:02:40Z-
dc.date.issued2020-
dc.identifier.citationSemiconductors. – 2020. – Vol. 54, № 12. – С. 1685–1688ru
dc.identifier.issn1063-7826-
dc.identifier.urihttps://elib.bsu.by/handle/123456789/253562-
dc.description.abstractOne of the most promising platforms to implement quantum technologies are coupled electron-nuclear spins in diamond in which the electrons of paramagnetic color centers play a role of “fast” qubits, while nuclear spins of nearby 13C atoms can store quantum information for a very long time due to their exceptionally high isolation from the environment. Essential prerequisite for a high-fidelity spin manipulation in these systems with tailored control pulse sequences is a complete knowledge of hyperfine interactions. Development of this understanding for the negatively charged “silicon-vacancy” (SiV–) and neutral (SiV0) color center, is a primary goal of this article, where we are presenting shortly our recent results of computer simulation of spatial and hyperfine characteristics of these SiV centers in H-terminated cluster C128[SiV]H98 along with their comparison with available experimental data.ru
dc.description.sponsorshipThis work has been supported in part by Belarusian Republican Foundation for Fundamental Research, grants no. FMS-036, and by National Research Nuclear University “MEPhI” (Moscow Engineering Physics Institute).ru
dc.language.isoenru
dc.publisherSpringerru
dc.subjectЭБ БГУ::ЕСТЕСТВЕННЫЕ И ТОЧНЫЕ НАУКИ::Физикаru
dc.titleSpatial and hyperfine characteristics of SiV– and SiV0 color centers in diamond: DFT simulationru
dc.typearticleru
dc.rights.licenseCC BY 4.0ru
dc.identifier.DOI10.1134/S1063782620120271-
dc.identifier.scopus85097067776-
Располагается в коллекциях:Кафедра физики полупроводников и наноэлектроники (статьи)

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