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https://elib.bsu.by/handle/123456789/247044| Title: | Эффект переключения на границе раздела полупроводник-полупроводник |
| Authors: | Ильяшук, Ю. М. Углянец, В. В. Федотов, А. К. |
| Keywords: | ЭБ БГУ::ЕСТЕСТВЕННЫЕ И ТОЧНЫЕ НАУКИ::Физика |
| Issue Date: | 1994 |
| Publisher: | Минск : Университетское |
| Citation: | Вестник Белорусского государственного университета. Сер. 1, Физика. Математика. Механика. – 1994. – № 1. – С. 24-27. |
| Abstract: | The peculiarities of I—V characteristics measured along the plane of individual electrically— active grain boundaries of a general type in shaped Silicon are studied. Longitudinal I— V characteristics were investigated at low temperetures (4 —25 K) when grain bulk conductivity is freezed out. Such I - V are characterized by current jump, which is explained on the basis of synergetis model of the field (non-ohmic) heating of carriers in the boundary channel |
| URI: | https://elib.bsu.by/handle/123456789/247044 |
| ISSN: | 0321-0367 |
| Licence: | info:eu-repo/semantics/openAccess |
| Appears in Collections: | 1994, №1 (январь) |
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