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Please use this identifier to cite or link to this item: https://elib.bsu.by/handle/123456789/247044
Title: Эффект переключения на границе раздела полупроводник-полупроводник
Authors: Ильяшук, Ю. М.
Углянец, В. В.
Федотов, А. К.
Issue Date: 1994
Publisher: Минск : Университетское
Citation: Вестник Белорусского государственного университета. Сер. 1, Физика. Математика. Механика. – 1994. – № 1. – С. 24-27.
Abstract: The peculiarities of I—V characteristics measured along the plane of individual electrically— active grain boundaries of a general type in shaped Silicon are studied. Longitudinal I— V characteristics were investigated at low temperetures (4 —25 K) when grain bulk conductivity is freezed out. Such I - V are characterized by current jump, which is explained on the basis of synergetis model of the field (non-ohmic) heating of carriers in the boundary channel
URI: https://elib.bsu.by/handle/123456789/247044
ISSN: 0321-0367
Licence: info:eu-repo/semantics/openAccess
Appears in Collections:1994, №1 (январь)

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