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https://elib.bsu.by/handle/123456789/247044Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Ильяшук, Ю. М. | - |
| dc.contributor.author | Углянец, В. В. | - |
| dc.contributor.author | Федотов, А. К. | - |
| dc.date.accessioned | 2020-07-31T09:21:44Z | - |
| dc.date.available | 2020-07-31T09:21:44Z | - |
| dc.date.issued | 1994 | - |
| dc.identifier.citation | Вестник Белорусского государственного университета. Сер. 1, Физика. Математика. Механика. – 1994. – № 1. – С. 24-27. | ru |
| dc.identifier.issn | 0321-0367 | - |
| dc.identifier.uri | https://elib.bsu.by/handle/123456789/247044 | - |
| dc.description.abstract | The peculiarities of I—V characteristics measured along the plane of individual electrically— active grain boundaries of a general type in shaped Silicon are studied. Longitudinal I— V characteristics were investigated at low temperetures (4 —25 K) when grain bulk conductivity is freezed out. Such I - V are characterized by current jump, which is explained on the basis of synergetis model of the field (non-ohmic) heating of carriers in the boundary channel | ru |
| dc.language.iso | ru | ru |
| dc.publisher | Минск : Университетское | ru |
| dc.rights | info:eu-repo/semantics/openAccess | en |
| dc.subject | ЭБ БГУ::ЕСТЕСТВЕННЫЕ И ТОЧНЫЕ НАУКИ::Физика | ru |
| dc.title | Эффект переключения на границе раздела полупроводник-полупроводник | ru |
| dc.type | article | ru |
| dc.rights.license | CC BY 4.0 | ru |
| Appears in Collections: | 1994, №1 (январь) | |
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