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Please use this identifier to cite or link to this item: https://elib.bsu.by/handle/123456789/247044
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dc.contributor.authorИльяшук, Ю. М.-
dc.contributor.authorУглянец, В. В.-
dc.contributor.authorФедотов, А. К.-
dc.date.accessioned2020-07-31T09:21:44Z-
dc.date.available2020-07-31T09:21:44Z-
dc.date.issued1994-
dc.identifier.citationВестник Белорусского государственного университета. Сер. 1, Физика. Математика. Механика. – 1994. – № 1. – С. 24-27.ru
dc.identifier.issn0321-0367-
dc.identifier.urihttps://elib.bsu.by/handle/123456789/247044-
dc.description.abstractThe peculiarities of I—V characteristics measured along the plane of individual electrically— active grain boundaries of a general type in shaped Silicon are studied. Longitudinal I— V characteristics were investigated at low temperetures (4 —25 K) when grain bulk conductivity is freezed out. Such I - V are characterized by current jump, which is explained on the basis of synergetis model of the field (non-ohmic) heating of carriers in the boundary channelru
dc.language.isoruru
dc.publisherМинск : Университетскоеru
dc.rightsinfo:eu-repo/semantics/openAccessen
dc.subjectЭБ БГУ::ЕСТЕСТВЕННЫЕ И ТОЧНЫЕ НАУКИ::Физикаru
dc.titleЭффект переключения на границе раздела полупроводник-полупроводникru
dc.typearticleru
dc.rights.licenseCC BY 4.0ru
Appears in Collections:1994, №1 (январь)

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