Please use this identifier to cite or link to this item:
https://elib.bsu.by/handle/123456789/223434
Title: | Electron irradiation effects in ерitaxial schottky barriers |
Authors: | Korshunov, F. Р. Marchenko, I. G. Zhdanovich, N. Е. Gurin, Р. М. |
Keywords: | ЭБ БГУ::ЕСТЕСТВЕННЫЕ И ТОЧНЫЕ НАУКИ::Физика |
Issue Date: | 2008 |
Publisher: | Минск : БГУ |
Citation: | Материалы и структуры современной электроники: сб. науч. тр. III Междунар. науч. конф., Минск, 25-26 сент. 2008 г. / редкол. : В. Б. Оджаев (отв. ред.) [и др.]. - Минск : БГУ, 2008. - С. 143-145 |
Abstract: | Today, semiconductor diodes with schottky barriers are increasingly more widely used in semiconductor electronics which is explained bу their higher operation speed as compared to bipolar devices. At the same time, behaviour of such devices in conditions of their opcration in the fields of various irradiations has not bееn studied sufficiently up till now. |
URI: | http://elib.bsu.by/handle/123456789/223434 |
ISBN: | 978-985-518-091-4 |
Appears in Collections: | 2008. Материалы и структуры современной электроники |
Files in This Item:
File | Description | Size | Format | |
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143-145.pdf | 548,56 kB | Adobe PDF | View/Open |
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