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Please use this identifier to cite or link to this item: https://elib.bsu.by/handle/123456789/223434
Title: Electron irradiation effects in ерitaxial schottky barriers
Authors: Korshunov, F. Р.
Marchenko, I. G.
Zhdanovich, N. Е.
Gurin, Р. М.
Keywords: ЭБ БГУ::ЕСТЕСТВЕННЫЕ И ТОЧНЫЕ НАУКИ::Физика
Issue Date: 2008
Publisher: Минск : БГУ
Citation: Материалы и структуры современной электроники: сб. науч. тр. III Междунар. науч. конф., Минск, 25-26 сент. 2008 г. / редкол. : В. Б. Оджаев (отв. ред.) [и др.]. - Минск : БГУ, 2008. - С. 143-145
Abstract: Today, semiconductor diodes with schottky barriers are increasingly more widely used in semiconductor electronics which is explained bу their higher operation speed as com­pared to bipolar devices. At the same time, behaviour of such devices in conditions of their opcration in the fields of various irradiations has not bееn studied sufficiently up till now.
URI: http://elib.bsu.by/handle/123456789/223434
ISBN: 978-985-518-091-4
Appears in Collections:2008. Материалы и структуры современной электроники

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