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https://elib.bsu.by/handle/123456789/210818| Title: | Использование TiN в качестве барьерного слоя в системе металлизации Ti/TiN/Au при формировании низкоомных контактов к алмазу |
| Authors: | Соловьев, Валерий Сергеевич Гусаков, Григорий Анатольевич Крекотень, Олег Владимирович |
| Keywords: | ЭБ БГУ::ЕСТЕСТВЕННЫЕ И ТОЧНЫЕ НАУКИ::Физика |
| Issue Date: | 2003 |
| Publisher: | Минск : БГУ |
| Citation: | Вестник Белорусского государственного университета. Сер. 1, Физика. Математика. Информатика. – 2003. - № 1. – С. 42-45. |
| Abstract: | The composition of titanium and titanium nitride films deposited on the synthetic diamond using the method magnetron sputtering has been studied. It is shown that annealing at high temperature (700-800 °C) leads to the formation of a titanium carbide layer at the diamond/Ti interface. Nitrogen does not diffuse into carbide layer and adjacent region of diamond. Titanium nitride layer also is a good diffusion barrier for titanium and gold deposited on the nitride surface. |
| URI: | http://elib.bsu.by/handle/123456789/210818 |
| ISSN: | 0321-0367 |
| Licence: | info:eu-repo/semantics/openAccess |
| Appears in Collections: | 2003, №1 (январь) |
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