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https://elib.bsu.by/handle/123456789/206822| Title: | Small-dose effects on electrical characteristics of AIGaN/GaN microwave transistors |
| Authors: | Belyaev, A. E. Konakova, R. V. Avksentyev, A. Yu. Kurakin, A. M. Lytvyn, P. M. Vitusevich, S. A. Petrychuk, M. V. Klein, N. Danylyuk, S. V. DaniIchenko, B. A. TiIak, V. Smart, J. Vertiatchikh, A. Eastman, L. F. |
| Keywords: | ЭБ БГУ::ЕСТЕСТВЕННЫЕ И ТОЧНЫЕ НАУКИ::Физика |
| Issue Date: | 2003 |
| Publisher: | Минск : БГУ |
| Citation: | Взаимодействие излучений с твердым телом: материалы V междунар. науч. конф., 6-9 окт. 2003 г., Минск. — Мн.: БГУ, 2003. — С. 96-98. |
| Abstract: | Effect of small dose gamma-irradiation on electrical characteristics of AIGaN/GaN high electron mobility transistors has been investigated. Decreasing of the leakage current and its noise has been registered after dose of 1x10*6 Rad. As-grown heterostructures used in further for the device fabrication have been examined after the same radiation treatment. The small dose radiation results are explained within a model that takes into account relaxation of elastic strains and structural-impurity ordering occurring in the barrier layer under irradiation. |
| URI: | http://elib.bsu.by/handle/123456789/206822 |
| ISBN: | 985-445-236-0; 985-445-235-2 |
| Appears in Collections: | 2003. Взаимодействие излучений с твердым телом |
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