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https://elib.bsu.by/handle/123456789/206561| Title: | Радиационно-стимулированное генерирование в кремниевых p-n-переходах |
| Other Titles: | Radiation-induced getteringin silicon p-n junctions / M.B.Tagaev |
| Authors: | Тагаев, М. Б. |
| Keywords: | ЭБ БГУ::ЕСТЕСТВЕННЫЕ И ТОЧНЫЕ НАУКИ::Физика |
| Issue Date: | 1999 |
| Publisher: | Минск : БГУ |
| Citation: | Взаимодействие излучений с твердым телом: Материалы III междунар. науч. конф., 6-8 окт. 1999 г., Минск: В 2 ч. Ч.2. — Мн.: БГУ, 1999. — С. 94-95. |
| Abstract: | Исследовано влияние у-радиации 60Co в диапазоне доз 103 - 5 105 Гр на вольтамперные характеристики (ВАХ) кремниевых лавинно-пролетных диодов (ЛПД). Показана возможность улучшения параметров ЛПД, вплоть до получения идеального диода Шокли с фактором неидеальности на прямой ветви BAX1 равным 1,17, за счет радиационно-стимулированного гетгерирования. |
| Abstract (in another language): | For small-area silicon diffusion p-n junctions that are used when producing IMPATT diodes it is shown that one can make their I - V curves close to the ideal one. To this end the packaged IMPATT diodes were exposed to 60Co y-radiation in the 103 to 5-10sGr dose range. When the irradiation dose was from 103 to 104 Grl then the diode I - V curves remained practically the same. The exposition up to a dose of 2 IO5Gr resulted in improvement of the diode electrical characteristics. By this the ideality factor for the forward branch of the I - V curve becomes 1.17 and the reverse current substantially decreases. An analysis made for the diode exposed to a dose of 2-105 Gr has shown that the forward branch of its I - V curve may be described by the expression similar to that for the ideal diode. |
| URI: | http://elib.bsu.by/handle/123456789/206561 |
| ISBN: | 985-445-237-9 |
| Appears in Collections: | 1999. Взаимодействие излучений с твердым телом |
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