Please use this identifier to cite or link to this item:
https://elib.bsu.by/handle/123456789/204500| Title: | Defects in Cu(lnGa)Se2/CdS heterostructure films induced by hydrogen ion implantation |
| Authors: | Yakushev, M. V. Tomlinson, R. D. Hill, А. E. Pilkington, R. D. Mudryi, A. V. Bodnar, I. V. Victorov, L. A. Gremenok, V. F. Shakin, L. A. Patuk, A. I. |
| Keywords: | ЭБ БГУ::ЕСТЕСТВЕННЫЕ И ТОЧНЫЕ НАУКИ::Физика |
| Issue Date: | 1999 |
| Publisher: | Минск : БГУ |
| Citation: | Взаимодействие излучений с твердым телом: Материалы III междунар. науч. конф., 6-8 окт. 1999 г., Минск: В 2 ч. Ч.1. — Мн.: БГУ, 1999. — С. 166-168. |
| Abstract: | The influence of H+ ion implantation on the photoluminescence (PL) properties of Cu(lnGa)Se2/CdS heterostructures has been studied. This treatment was found to increase the PL intensity of donor-acceptor (DAP) band at 1.13 eV because of the passivation by hydrogen atoms of the non-radiative recombination centers on the boundary of Cu(InGa)Se2 and CdS layers. Two studied. This treatment was found to increase the PL intensity of donor-acceptor (DAP) band at 1.13 eV because of the passivation by hydrogen atoms of the non-radiative recombination centers on the boundary of Cu(InGa)Se2 and CdS layers. Two broad bands peaks at 0.96 eV and at 0.82 eV in PL spectra of ion-implanted Cu(InGa)Se2 films have been found. The tentative model to explain the origin of the broad PL bands has been discussed. |
| URI: | http://elib.bsu.by/handle/123456789/204500 |
| ISBN: | 985-445-236-0 |
| Appears in Collections: | 1999. Взаимодействие излучений с твердым телом |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| 166-168.pdf | 188 kB | Adobe PDF | View/Open |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.