Formation of buried high-resitant layers in silicon by two-step substoichiometric implantation of nitrogen IONS

Abstract

The implantation of nitrogen at an elevated temperature with a dose of (2,5-4)T016 ions/cm2 at 200 keV and higher energies was carried out. The elevated temperature of the substrate results in reduction of damage in the top surface layer and prevention of it from contamination due to hydrocarbons and atomic recoil processes. Then the implantation at room temperature with was carried out. The elevated temperature of the substrate results in reduction of damage in the top surface layer and prevention of it from contamination due to hydrocarbons and atomic recoil processes. Then the implantation at room temperature with dose necessary for the formation of buried amorphous layers was also carried out. The temperature of subsequent annealing was below the threshold at which complete crystallization of the amorphous layers is possible. By means of N 2 * ions implantation at an energy of 200 keV and higher with subsequent annealing at 900°C buried amorphous layers with resistance up to * ions implantation at an energy of 200 keV and higher with subsequent annealing at 900°C buried amorphous layers with resistance up to 106 Q cm were formed.