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https://elib.bsu.by/handle/123456789/196314| Title: | Экранирование электростатического ноля в кристаллах c прыжковой миграцией электронов по примесям |
| Authors: | Вырко, Сергей Александрович |
| Keywords: | ЭБ БГУ::ЕСТЕСТВЕННЫЕ И ТОЧНЫЕ НАУКИ::Физика |
| Issue Date: | 2002 |
| Publisher: | Минск : БГУ |
| Citation: | Вестник Белорусского государственного университета. Сер. 1, Физика. Математика. Информатика. – 2002. - № 2. – С. 55-60. |
| Abstract: | The expressions for Debye - HUckel and Schottky - Mott screening length of external electrostatic field in the crystal semiconductor with hopping migrations of electrons (holes) over hydrogen-like donors (acceptors) is obtained. The existence of a “hidden” conducting layer in the hopping conductivity regime for semiconductors with small and high compensation degrees is predicted. |
| URI: | http://elib.bsu.by/handle/123456789/196314 |
| ISSN: | 0321-0367 |
| Licence: | info:eu-repo/semantics/openAccess |
| Appears in Collections: | 2002, №2 (май) |
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