Please use this identifier to cite or link to this item:
https://elib.bsu.by/handle/123456789/164183| Title: | Di-Interstitial-Oxygen Center in Silicon: Structure, Electronic Properties and Annealing Behavior |
| Authors: | Markevich, V. P. Gusakov, V. E. Lastovskii, S. B. Murin, L. I. |
| Keywords: | ЭБ БГУ::ЕСТЕСТВЕННЫЕ И ТОЧНЫЕ НАУКИ::Физика |
| Issue Date: | 2016 |
| Publisher: | Минск : Изд. центр БГУ |
| Citation: | Материалы и структуры современной электроники : сб. науч. тр. VII Междунар. науч. конф., посвящ. 50-летию каф. физики полупроводников и наноэлектроники, Минск, 12–13 окт. 2016 г. / редкол. : В. Б. Оджаев (отв. ред.) [и др.]. — Минск : Изд. центр БГУ, 2016. — С. 144–147. |
| Abstract: | The experimental and theoretical data on the structure, electronic and dynamic properties of the I2O complex are presented. |
| URI: | http://elib.bsu.by/handle/123456789/164183 |
| ISBN: | 978-985-553-403-8 |
| Sponsorship: | Belarusian Republican Foundation for Fundamental Research. |
| Appears in Collections: | 2016. Материалы и структуры современной электроники |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| С.144-147_Markevich.pdf | 585,79 kB | Adobe PDF | View/Open |
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