Please use this identifier to cite or link to this item:
https://elib.bsu.by/handle/123456789/164181
Title: | Depth Distribution of Defects in Electron Irradiated Diamond |
Authors: | Zaitsev, A. M. Moe, K. S. Wang, W. |
Keywords: | ЭБ БГУ::ЕСТЕСТВЕННЫЕ И ТОЧНЫЕ НАУКИ::Физика |
Issue Date: | 2016 |
Publisher: | Минск : Изд. центр БГУ |
Citation: | Материалы и структуры современной электроники : сб. науч. тр. VII Междунар. науч. конф., посвящ. 50-летию каф. физики полупроводников и наноэлектроники, Минск, 12–13 окт. 2016 г. / редкол. : В. Б. Оджаев (отв. ред.) [и др.]. — Минск : Изд. центр БГУ, 2016. — С. 141–144. |
Abstract: | Detailed measurements of photoluminescence of diamond irradiated in 1 MeV electrons have been performed. It has been found that the depth distribution of radiation defects can be described by contributions of strong defect production by primary electrons and weak secondary irradiation by gamma rays. The depth of the strong defect production is almost two times less that the theoretically predicted propagation of 1 MeV electrons (1.2 mm). The secondary gamma irradiation penetrates through the whole diamond sample of a few millimeter thick. Several new optical centers has been found in irradiated CVD diamond and analyzed. |
URI: | http://elib.bsu.by/handle/123456789/164181 |
ISBN: | 978-985-553-403-8 |
Sponsorship: | Belarusian Republican Foundation for Fundamental Research. |
Appears in Collections: | 2016. Материалы и структуры современной электроники |
Files in This Item:
File | Description | Size | Format | |
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С.141-144_Zaitsev.pdf | 483,16 kB | Adobe PDF | View/Open |
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