Please use this identifier to cite or link to this item:
https://elib.bsu.by/handle/123456789/109018| Title: | Investigation of defects in Cu(In,Ga)(S,Se)2 films using the photocurrent decay technique |
| Authors: | Saad, A. Odrinski, A. Tivanov, M. Drozdov, N. Fedotov, A. Gremenok, V. Mazanik, A. Patryn, A. Zalesski, V. Zaretskaya, E. |
| Keywords: | ЭБ БГУ::ЕСТЕСТВЕННЫЕ И ТОЧНЫЕ НАУКИ::Физика |
| Issue Date: | Feb-2008 |
| Publisher: | Springer |
| Citation: | Journal of Materials Science: Materials in Electronics. - 2008. - Vol. 19. - P. 371 - 374. |
| Abstract: | In the present work we demonstrate the possibility of using the photoinduced current transient spectroscopy (PICTS) method to study the defects in Cu(In,Ga)(S,Se)2 films which can be used as an absorber layer in solar cells (SCs). The conducted experiments enable one to determine the parameters (activation energies and effective capture cross-sections) of the defects revealed in the films under study. |
| URI: | http://elib.bsu.by/handle/123456789/109018 |
| Appears in Collections: | Архив статей |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| Investigation of defects in Cu(In,Ga)(S,Se)2 films using the photocurrent decay technique.pdf | 281,24 kB | Adobe PDF | View/Open |
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