Please use this identifier to cite or link to this item:
https://elib.bsu.by/handle/123456789/107099| Title: | Admittance and permittivity in doped layered TlGaSe2 |
| Authors: | Dawood, S. A. Fedotov, A. K. Mammadov, T. G. Zhukowski, P. Koltunowicz, T. N. Saad, A. N. Drozdov, N. A. |
| Issue Date: | Jun-2014 |
| Citation: | Acta Physica Polonica A. – 2014 – Vol. 125, № 6. – P. 1267 – 1270. |
| Abstract: | In doped TlGaSe2 crystals the phase transitions at low temperatures were observed using admittance and dielectric spectroscopy in a temperature range of 80 - 320 K. The admittance and permittivity measurements in the studied samples indicated that after Fe or Tb doping by impurities with concentrations Nimp < 0,5 at.% nonequilibrium electronic phase transition is observed. Doping with Nimp > 0,5 at.% resulted in full suppression of this phase transition presence. |
| URI: | http://elib.bsu.by/handle/123456789/107099 |
| Appears in Collections: | Архив статей |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| Admittance and Permittivity in Doped Layered TlGaSe2.pdf | 852,52 kB | Adobe PDF | View/Open |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.