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https://elib.bsu.by/handle/123456789/10477| Title: | Monte Carlo simulation of electron transport in deep submicron MOSFETs with three 40 nm gates |
| Authors: | Zhevnyak, O. G. Borzdov, A. V. Speransky, D. S. Borzdov, V. M. |
| Keywords: | ЭБ БГУ::ТЕХНИЧЕСКИЕ И ПРИКЛАДНЫЕ НАУКИ. ОТРАСЛИ ЭКОНОМИКИ::Электроника. Радиотехника |
| Issue Date: | 2009 |
| Publisher: | World Scientific Pub Co Inc. |
| Citation: | Physics, Chemistry and Application of Nanostructures: Reviews and Short Notes. Proceedings of the International Conference on Nanomeeting 2009 (Minsk, Belarus, 26 – 29 May 2009). - 2009. - P. 573-576 |
| Abstract: | The electrophysical parameters of three-gate short n-channel MOSFETs in comparison with those of conventional single-gate MOSFETs are investigated. By means of Monte Carlo simulation such parameters as, in particular, electron energy and mobility are calculated. It is shown that under certain conditions the values of these parameters may be higher in three-gate MOSFETs. |
| URI: | http://elib.bsu.by/handle/123456789/10477 |
| Appears in Collections: | Статьи |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| Наномитинг2009.doc | 95,5 kB | Microsoft Word | View/Open |
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