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https://elib.bsu.by/handle/123456789/10475| Title: | Эффекты влияния стока на электрический потенциал в инверсионном слое кремния в короткоканальных МОП-транзисторах |
| Authors: | Жевняк, О. Г. |
| Keywords: | ЭБ БГУ::ЕСТЕСТВЕННЫЕ И ТОЧНЫЕ НАУКИ::Физика |
| Issue Date: | 2009 |
| Publisher: | Материалы конференции ФММН2009 |
| Abstract: | In this paper induced by drain voltage effects on electric potential in inversion layer of short channel MOSFETs are studied. It is shown there is the region with slow negative changing of potential in these devices. The principal parameters which control the negative behavior of electric potential in short channel MOSFETs are considered. The DIBL-effect are modeled by means of Monte Carlo simulation. |
| URI: | http://elib.bsu.by/handle/123456789/10475 |
| Appears in Collections: | Статьи |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| ФММН2009.doc | 87 kB | Microsoft Word | View/Open |
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