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Please use this identifier to cite or link to this item: https://elib.bsu.by/handle/123456789/49100
Title: Annealing effects on photoluminescence of SiNX films grown by PECVD
Authors: Komarov, F. F.
Parkhomenko, I. N.
Vlasukova, L. A.
Issue Date: 2013
Abstract: Si-rich and N-rich silicon nitride films were deposited at low temperature 300 °C by using plasma-enhanced chemical vapor deposition (PECVD). The optical and structural properties of these films have been investigated by ellipsometry, Rutherford backscattering (RBS), transmission electron microscopy (TEM), Raman spectroscopy (RS) and photoluminescence (PL). The formation of silicon clusters in both Si-rich and N-rich silicon nitride films after annealing at 900 °C and 1000 °C for hour in N2 ambient has been revealed by TEM. Dependency of PL spectra on stoichiometry and post-annealing temperature was analyzed. The contribution of Si and N-related defects in emitting properties of Si-rich and N-rich SiNx has been discussed.
URI: http://elib.bsu.by/handle/123456789/49100
Appears in Collections:2013. Взаимодействие излучений с твердым телом

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