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https://elib.bsu.by/handle/123456789/342814| Title: | The effect of thin surface oxide layers of ion beam sythesis of InAs nanocrystals in Si |
| Authors: | Komarov, F.F. Vlasukova, L.I. Milchanin, O.V. Greben, M.V. Komarov, A.F. Mudryi, A.V. Wesch, W. Wendler, E. Togambaeva, A.K. |
| Open Researcher and Contributor ID: | 0000-0001-8273-6908 0000-0002-8300-1070 |
| Keywords: | ЭБ БГУ::ТЕХНИЧЕСКИЕ И ПРИКЛАДНЫЕ НАУКИ. ОТРАСЛИ ЭКОНОМИКИ::Электроника. Радиотехника ЭБ БГУ::ЕСТЕСТВЕННЫЕ И ТОЧНЫЕ НАУКИ::Физика |
| Issue Date: | 2012 |
| Publisher: | Kovcheg |
| Citation: | Plasma physics and plasma technology : Volume II (Sections 4-6), Minsk, 17–21 сентября 2012 года. – Minsk: Kovcheg, 2012. – P. 491-494. |
| Abstract: | Nanosized crystallites have been synthesized into Si and SiO2/Si structures by means of As (170 keV, 3.2×1016 cm-2) and In (250 keV, 2.8×1016 cm-2) implantation at 25 °C and 500 °C and subsequent annealing at 1050 °C for 3 min. RBS, TEM and PL techniques were used to analyse the impurity distribution and the structural and optical characteristics of the implanted layers. It was found that oxidation of samples before thermal treatment significantly reduces the As and In losses. A broad band in the region of 1.2 – 1.5 μm was detected in the photoluminescence spectra. |
| URI: | https://elib.bsu.by/handle/123456789/342814 |
| Licence: | info:eu-repo/semantics/openAccess |
| Appears in Collections: | Кафедра квантовой радиофизики и оптоэлектроники. Статьи |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| Власукова.pdf | 868,3 kB | Adobe PDF | View/Open |
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